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PCB 재료

테플론 세라믹 필러 copper -clad F4BTME-1/2원자재

PCB 재료

테플론 세라믹 필러 copper -clad F4BTME-1/2원자재

F4BTME-1/2는 과학적인 제형과 엄격한 기술 공정에 따라 수입한 광택유리 천을 테플론 수지로 깔고 필러를 나노 세라믹 막으로 쌓아 적층한다. 저조도 동박을 채택했습니다. 이 제품은 전기적 성능에서 F4BM-2-A 시리즈보다 장점을 가지며, 발열이 향상되고 열팽창 계수가 작습니다. PIM 안정성, 4G 및 5G의 통신에 적용 가능합니다.  

 

기술 사양:  

Appearance

Meet   the specification requirements for the laminate of microwave PCB

by   National and Military Standards.

Types

F4BTME-1/2

(255)

F4BTME-1/2

(265)

F4BTME-1/2

(285)

F4BTME-1/2

(294)

F4BTME-1/2

(300)

F4BTME-1/2

(320)

F4BTME-1/2

(338)

F4BTME-1/2

(350)

F4BTME-1/2

(400)

F4BTME-1/2

(440)



Dimension(mm)

610×460

600×500

1220×914

1220×1000

1500×1000


For   special dimension,customized laminates is available.

Thickness   and Tolerance(mm)

Laminate   thickness

0.254

0.508

0.762

0.787

1.016

Tolerance

±0.025

±0.05

±0.05

±0.05

±0.05

Laminate   thickness

1.27

1.524

2.0

3.0

4.0

Tolerance

±0.05

±0.05

±0.075

±0.09

±0.1

Laminate   thickness

5.0

6.0

9.0

10.0

12.0

Tolerance

±0.1

±0.12

±0.18

±0.18

±0.2

Mechanical   Strength

Cutting/punching

Strength

Thickness1mm,no   burrs after cutting,minimum space between two   punching holes is 0.55mm,no delamination.

Thickness1mm,no   burrs after cutting,minimum space between two   punching holes is 1.10mm,no delamination.

Peel   strength(1oz copper)

Normal   state:≥16N/cm;No bubble、delamination、peel strength≥14N/cm(in the constant humidity and temperature、and   keep in the melting solder of 265℃±2℃ for 20 seconds).


Thermal   stress

After   solder float,260ºC,10s,≥3 times ,no delamination and blister.

Chemical   Property

According   to the properties of laminate,the chemical etching method for PCB can be used. The dielectric   properties of laminate are not changed. The plating through hole can be done,but the sodium treatment or the plasma treatment must be used.

 

Electrical   Property

Name

Test   condition

Unit

Value

Density

Normal   state

g/   cm3

2.1~2.8

Moisture   Absorption

Dip   in the distilled water of 20±2℃ for24 hours

%

≤0.05

Operating   Temperature

High-low   temperature chamber

-50℃~+260℃

Thermal   Conductivity


W/m/k

0.6~0.9

CTE

(typical)

-55~288℃

(εr :2.55~3.0)

ppm/

15(x)

15(y)

65(z)

CTE

(typical)

-55~288℃

(εr :3.2~3.5)

ppm/

15(x)

15(y)

55(z)

CTE

(typical)

-55~288℃

(εr :4.0~4.4)

ppm/

12(x)

14(y)

50(z)

Shrinkage   Factor

2   hours in boiling water

%

   0.0002

Surface   Resistivity

500V

DC

Normal   state

M·Ω

≥1×106

Constant   humidity and temperature

≥1×105

Volume   Resistivity

Normal   state

MΩ.cm

≥1×107

Constant   humidity and temperature

≥1×106

Surface   dielectric strength

Normal   state

d=1mm(Kv/mm)

≥1.2

Constant   humidity and temperature

≥1.1

Dielectric   Constant

10GHZ

εr

2.85±0.05、2.94±0.05

3.00±0.05、3.20±0.05

3.38±0.05、3.50±0.05

4.00±0.08、4.40±0.1

Thermal   Coefficient ofεr

(PPM/℃)

-50150

εr

Value

2.85,2.94

-85

3.0,3.2

-75

3.38

-65

3.5

-60

4.0

-60

4.4

-60

Dissipation   Factor

10GHZ

tgδ

2.553.0

≤1.5×10-3

tgδ

3.03.5

≤2.0×10-3

tgδ

4.04.4

≤2.5×10-3


PIMD

2.5   GHZ

dbc

-163


UL   Flammability

Rating

94   V-0



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